Metal-metal capacitor array

Details Metal-metal capacitor array Metal-metal capacitor array

2006-01-03

2006-01-03

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S307000, C257S308000

Reexamination Certificate

active

06982454

ABSTRACT:
A capacitor includes a semiconductor substrate, a bottom conductive pattern, first to third insulating layers, first to third metal plates and a connecting pattern. The bottom conductive pattern is formed on the semiconductor substrate. The first to third insulating layers are formed on the bottom conductive pattern, the first and second metal plates, respectively. The first metal plate is formed on the first insulating layer within a first area. The first metal plate is electrically connected to the bottom conductive pattern. The second metal plate is formed on the second insulating layer within the first area. The second metal plate has an opening in the center thereof. The third metal plate is formed on the third insulating layer. The connecting pattern is formed through the second and third insulating layers and the opening of the second metal plate. The connecting pattern electrically connects the first and the third metal plate.

REFERENCES:
patent: 5838032 (1998-11-01), Ting

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