Method for manufacturing a semiconductor thin film

Details Method for manufacturing a semiconductor thin film Method for manufacturing a semiconductor thin film

2006-01-31

2006-01-31

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S149000

Reexamination Certificate

active

06991976

ABSTRACT:
A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

REFERENCES:
patent: 4561171 (1985-12-01), Schlosser
patent: 4741601 (1988-05-01), Saito
patent: 4977098 (1990-12-01), Yu et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5229306 (1993-07-01), Lindberg et al.
patent: 5244819 (1993-09-01), Yue
patent: 5275851 (1994-01-01), Fonash et al.
patent: 5327007 (1994-07-01), Imura et al.
patent: 5366917 (1994-11-01), Watanabe et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5441899 (1995-08-01), Nakai et al.
patent: 5443661 (1995-08-01), Oguro et al.
patent: 5444001 (1995-08-01), Tokuyama
patent: 5461002 (1995-10-01), Safir
patent: 5481120 (1996-01-01), Mochizuki et al.
patent: 5486237 (1996-01-01), Sano et al.
patent: 5502331 (1996-03-01), Inou et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5539245 (1996-07-01), Imura t al.
patent: 5561303 (1996-10-01), Schrantz et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5619044 (1997-04-01), Makita et al.
patent: 5696011 (1997-12-01), Yamazaki et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5707882 (1998-01-01), Hamada et al.
patent: 5759879 (1998-06-01), Iwasaki
patent: 5773847 (1998-06-01), Hayakawa
patent: 5789284 (1998-08-01), Yamazaki et al.
patent: 5796116 (1998-08-01), Nakata et al.
patent: 5797999 (1998-08-01), Sannomiya et al.
patent: 5828429 (1998-10-01), Takemura
patent: 5837569 (1998-11-01), Makita et al.
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5859443 (1999-01-01), Yamazaki et al.
patent: 5864151 (1999-01-01), Yamazaki et al.
patent: 5888857 (1999-03-01), Zhang et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5894137 (1999-04-01), Yamazaki et al.
patent: 5899709 (1999-05-01), Yamazaki et al.
patent: 5900654 (1999-05-01), Spratt
patent: 5932893 (1999-08-01), Miyanga et al.
patent: 5961743 (1999-10-01), Yamazaki et al.
patent: 5970327 (1999-10-01), Makita et al.
patent: 5972105 (1999-10-01), Yamazaki et al.
patent: 5972785 (1999-10-01), Shishiguchi et al.
patent: 5976956 (1999-11-01), Gardner et al.
patent: 5985740 (1999-11-01), Yamazaki et al.
patent: 6013544 (2000-01-01), Makita et al.
patent: 6048758 (2000-04-01), Yamazaki et al.
patent: 6048780 (2000-04-01), Hayakawa
patent: 6059875 (2000-05-01), Kirkland et al.
patent: 6071766 (2000-06-01), Yamazaki et al.
patent: 6093587 (2000-07-01), Ohtani
patent: 6100562 (2000-08-01), Yamazaki et al.
patent: 6153445 (2000-11-01), Yamazaki et al.
patent: 6160279 (2000-12-01), Zhang et al.
patent: 6197626 (2001-03-01), Yamazaki et al.
patent: 6204101 (2001-03-01), Yamazaki et al.
patent: 6274888 (2001-08-01), Suzuki et al.
patent: 6306694 (2001-10-01), Yamazaki et al.
patent: 6323071 (2001-11-01), Zhang et al.
patent: 6331457 (2001-12-01), Yamazaki et al.
patent: 6338991 (2002-01-01), Zhang et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6489189 (2002-12-01), Yamazaki et al.
patent: 6518083 (2003-02-01), Sato et al.
patent: 6518102 (2003-02-01), Tanaka et al.
patent: 6528358 (2003-03-01), Yamazaki et al.
patent: RE38266 (2003-10-01), Yamazaki et al.
patent: 03-229415 (1991-10-01), None
patent: 03-280435 (1991-12-01), None
patent: 06-333824 (1994-02-01), None
patent: 06-333825 (1994-02-01), None
patent: 07-335899 (1995-12-01), None
patent: 07-335905 (1995-12-01), None
patent: 08-236471 (1996-09-01), None
patent: 02000306915 (2000-11-01), None
Honda, et al., “Behavior of Fe Impurity During HC1 Oxidation”, J. Electrochem. Soc., vol. 142, No. 10, Oct. 1995, pp. 3486-3492.
Jablonski, et al., “Gettering of Cu and Ni Impurities in SIMOX Wafers”, J. Electrochem. Soc., vol. 142, No. 6, Jun. 1995, pp. 2059-2066.
Liu, et al., “Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing”, Appl.Phys.Lett., vol. 55, No. 7, pp 660-662, Aug. 14, 1989.
Liu, et al., “Polycrystalline silicon thin film transistors on Corning 7059 glass substrates using short time, low-temperature processing”, Appl.Phys.Lett., vol. 62, No. 20, pp. 2554-2556, May 17, 1993.
Hayzelden, et al., “In situ transmission electron microscopy studies of silicide-mediated crystallization of amorphous silicon”, Appl.Phys.Lett., vol. 60, No. 2, pp. 225-227, Jan. 13, 1992.
Kakkad, et al., “Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon”, J.Appl.Phys., vol. 65, No. 5, pp. 2069-2072, Mar. 1, 1989.
Kakkad, et al., “Low Temperature Selective Crystallization of Amorphous Silicon”, Journal of Non-Crystalline Solids, vol. 115, pp. 66-68, 1989.
Dvurechenskii, et al., “Transport Phenomena in Amorphous Silicon Doped by Ion Implantation of 3d Metals”, Phys. Stat. Sol., vol. 95, pp. 635-640, 1986.
Hempel, et al., “Needle-Like Crystallization of Ni Doped Amorphous Silicon Thin Films”, Solid State Communications, vol. 85, No. 11, pp. 921-924, 1993.

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