Dry etching method

Details Dry etching method Dry etching method

1994-02-02

1995-05-30

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156643, 156646, 156656, 156664, H01L 2100

Patent

active

054198097

ABSTRACT:
A selecting anisotropic etching method for a GaAs/AlGaAs stacked system is disclosed. In a process for forming a recess for an HEMT gate, an n.sup.+ --GaAs layer on an n.sup.+ --AlGaAs layer is etched using a COS (carbonyl sulfide) /SF.sub.6 / CL.sub.2 mixed gas. The etching proceeds with radicals F.sup.* and Cl.sup.* as main etchants. On the other hand, carbonyl groups and C-O linkages derived from COS are introduced into a sputtered product of the resist mask for producing a carbonaceous polymer having a tough structure. The carbonaceous polymer forms a sidewall protective layer in conjunction with sulphur yielded from COS to contribute to anisotropic etching. It is possible with the present method to diminish the amount of the carbonaceous polymer necessary for procuring anisotropy to assure high selectivity, low pollution and low damage process.

REFERENCES:
Hikosaka et al. "Selective Dry Etching of AlGaAs-GaAs Heterojunction", Japanese Journal of Applied Physics, vol. 20, No. 11, Nov. 1981, pp. L847-L850.

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