Method of providing electrical interconnect between two layers w

Details Method of providing electrical interconnect between two layers w Method of providing electrical interconnect between two layers w

1994-04-06

1995-05-30

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

324500, 324724, 437 8, 437228, 437244, 437 38, H01L 21306

Patent

active

054198070

ABSTRACT:
A method is disclosed of forming a high elevation area and a low elevation area in a substrate and of electrically interconnecting the high elevation area and the low elevation area. The method includes anisotropically etching into a non-masked portion of monocrystalline silicon in a selective manner of one silicon plane relative to another silicon plane to produce a high elevation area and a low elevation area which are laterally angled relative to one another. The high elevation area and the low elevation area thereby interconnected by a substantially planar, non-perpendicularly angled surface. Such areas and plane are then doped to form a continuous electrically conductive and interconnecting diffusion region extending from the high elevation area, through and along the angled surface to the low elevation area. A semiconductor apparatus having the above construction is also disclosed. Also disclosed is an epitaxial silicon growth and etching process, and a semiconductor apparatus having multiple different monocrystalline silicon portions. Further disclosed is a method of producing a testing apparatus having a projection formed essentially of electrically conductive polysilicon.

REFERENCES:
patent: 4312117 (1982-01-01), Robillard et al.
patent: 4585991 (1986-04-01), Reid et al.
patent: 4952272 (1990-08-01), Okino et al.
patent: 5236428 (1994-07-01), Farnworth et al.
Sarro, P. M. et al.; Silicon Cantilever Beams Fabricated by Electrochemically Controlled Etching for Sensor Application; J. Electrochem. Soc.:Solid State Science and Tech, pp. 1724-1729. (Aug. 1986).

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