Photoresist polymer and photoresist composition including...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S325000, C430S331000, C430S311000, C430S905000, C430S906000, C430S910000, C430S914000, C430S921000, C430S920000, C430S925000, C430S942000, C430S945000, C430S919000, C430S966000, C526S307400, C526S307500

Reexamination Certificate

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07081325

ABSTRACT:
Photoresist polymers and photoresist compositions containing the same are disclosed. A negative photoresist composition containing a photoresist polymer comprising a repeating unit represented by Formula 4 prevents collapse of patterns when photoresist patterns of less than 50 nm are formed. Accordingly, the disclosed negative photoresist composition is very effective for a photolithography process using EUV (Extreme Ultraviolet, 13 nm) light source.wherein R1, R2, R3, R4, R5, R6, R7, a, b and c are as defined in the description.

REFERENCES:
patent: 4151333 (1979-04-01), Lenke et al.
patent: 6593142 (2003-07-01), Kelly et al.
patent: 2003/0236375 (2003-12-01), Salamone et al.

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