Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-03
2006-01-03
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C365S145000
Reexamination Certificate
active
06982453
ABSTRACT:
A semiconductor device having a semiconductor substrate; an insulating film formed on said semiconductor substrate; a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode which are stacked sequentially on the insulating film; a first hydrogen barrier film; a first inter-layer insulating film covering said ferroelectric capacitor; and a second inter-layer insulating film stacked on the first inter-layer insulating film, the first hydrogen barrier film being interposed between the first and second interlayer insulating films is proposed.
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T. Morimoto et al., “Excellent Ferroelectric Properties in PZT Capacitor Cell with Thin SRO Film in Both Top and Bottom Electrodes,” Extended Abstracts of the 1999 International Conference on Solid State Devices and Materials, Tokyo, 1999 pp. 396-397.
Hidaka Osamu
Iwamoto Tsuyoshi
Kanaya Hiroyuki
Kumura Yoshinori
Kunishima Iwao
Kabushiki Kaisha Toshiba
Pert Evan
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