Semiconductor etching process

Details Semiconductor etching process Semiconductor etching process

1994-02-16

1995-05-30

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

252 791, 437129, 437234, H01L 21306, B44C 122

Patent

active

054198046

ABSTRACT:
A process for plasma etching a compound semiconductor heterostructure, e.g. to fabricate a ridge laser on a wavelength demultiplexer comprises anisotropic etching of the semiconductor by exposure to a plasma incorporating methane, hydrogen and oxygen. The oxygen content of the plasma is derived from a gaseous precursor such as carbon dioxide or nitrous oxide.

REFERENCES:
patent: 5068007 (1991-11-01), Rogers et al.

Affiliated with

Also associated with

Rating

Semiconductor etching process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor etching process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor etching process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-359239