Process for doping hemispherical grain silicon

Details Process for doping hemispherical grain silicon Process for doping hemispherical grain silicon

1996-12-02

1998-08-25

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 47, 437 60, 437919, 148DIG14, H01L 21223

Patent

active

057982805

ABSTRACT:
A process for doping hemispherical grain silicon is provided and includes the steps of providing hemispherical grain silicon and a source of a dopant material and exposing the hemispherical grain silicon to the dopant material at a temperature less than the formation temperature of the hemispherical grain silicon for a time and at a pressure sufficient for diffusion of the dopant material into the hemispherical grain silicon to occur. The grain size of the HSG silicon is not adversely affected (i.e., reduced in size or changed in shape) by eliminating the need for a high temperature annealing step.

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patent: 5444013 (1995-08-01), Akram et al.
patent: 5444653 (1995-08-01), Nasagawa et al.
patent: 5494841 (1996-02-01), Dennison et al.
patent: 5622889 (1997-04-01), Yoo et al.

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