Semiconductor device and a method of manufacturing the same

Details Semiconductor device and a method of manufacturing the same Semiconductor device and a method of manufacturing the same

2006-05-09

2006-05-09

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S331000, C257S340000, C257S401000

Reexamination Certificate

active

07042048

ABSTRACT:
Heightening of breakdown voltage of a trench gate type power MISFET is actualized without increasing the number of manufacturing steps. In the manufacturing method of the semiconductor device according to the present invention, p−type semiconductor region and p−type field limiting rings are formed in a gate line area simultaneously in one impurity ion implantation step so as to bring them into contact with a groove having a gate extraction electrode formed therein. Upon formation, supposing that the width of the gate extraction electrode disposed outside the groove is CHSP, and the resistivity of the n−type single crystal silicon layer1B is ρ (Ω·cm), the CHSP is set to satisfy the following equation: CHSP≦3.80+0.148ρ.

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