Semiconductor device with a fluorinated silicate glass film...

Details Semiconductor device with a fluorinated silicate glass film... Semiconductor device with a fluorinated silicate glass film...

2006-03-14

2006-03-14

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S753000, C257S760000

Reexamination Certificate

active

07012336

ABSTRACT:
A plurality of metal wire layers consisting of a first metal wire layer and a second metal wire layer are formed on a semiconductor substrate. A fluorinated silicate glass film serving as an interlayer metal dielectric film is formed between the first and second metal wire layers. A silicon nitride film serving as a protective insulation film is formed on the fluorinated silicate glass film layer. An adhesive layer made of, for example, a P—SiO film, P—SiON film, or PE-SiO film, is formed between the fluorinated silicate glass film and the silicon nitride film.

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