Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-19
2006-09-19
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S412000
Reexamination Certificate
active
07109536
ABSTRACT:
A memory embedded semiconductor device according to the present invention has a memory region having a memory transistor and a logic region having a logic transistor each provided in a common semiconductor substrate. The logic transistor has a gate electrode provided on the semiconductor substrate and source/drain diffusion layers formed in the semiconductor substrate each having a silicide film formed thereon. On the other hand, the memory transistor has a gate electrode provided on the semiconductor substrate and source/drain diffusion layers formed in the semiconductor substrate each having a silicide film formed thereon to be thinner than the silicide film formed on each of the source/drain diffusion layers of the logic transistor.
REFERENCES:
patent: 4689667 (1987-08-01), Aronowitz
patent: 4697333 (1987-10-01), Nakahara
patent: 7-94596 (1995-04-01), None
patent: 2000-332220 (2000-11-01), None
patent: 2001-127270 (2001-05-01), None
patent: 2003536862 (2003-05-01), None
Booth Richard A.
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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