Semiconductor devices having a non-volatile memory...

Details Semiconductor devices having a non-volatile memory... Semiconductor devices having a non-volatile memory...

2006-04-11

2006-04-11

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S314000, C257S315000, C257S321000, C257S324000, C257S326000

Reexamination Certificate

active

07026685

ABSTRACT:
Semiconductor devices including a non-volatile memory transistor and methods for manufacturing such semiconductor devices are described. One semiconductor device may include a silicon substrate10,a floating gate22disposed above the silicon substrate10through a first dielectric layer20,a second dielectric layer26that contacts at least a part of the floating gate22,a control gate28formed over the second dielectric layer26,and a source region14and a drain region16formed in the silicon substrate10.A wiring layer40is provided above the floating gate22,and the entirety of the floating gate22is overlapped by the wiring layer40as viewed in a plan view.

REFERENCES:
patent: 5895949 (1999-04-01), Endoh
patent: 5959879 (1999-09-01), Koo
patent: 6100579 (2000-08-01), Sonoda et al.
patent: 6274907 (2001-08-01), Nakagawa
patent: 6723604 (2004-04-01), Yuan et al.

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