Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-25
2006-04-25
Trinh, Michael (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S477000, C438S507000, C438S604000
Reexamination Certificate
active
07033938
ABSTRACT:
The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.
REFERENCES:
patent: 5719895 (1998-02-01), Jewell et al.
patent: 5888840 (1999-03-01), Kudo
patent: 5944913 (1999-08-01), Hou et al.
patent: 6150677 (2000-11-01), Tanaka et al.
patent: 6198112 (2001-03-01), Ishida et al.
patent: 6207973 (2001-03-01), Sato et al.
patent: 6284583 (2001-09-01), Saida et al.
patent: 6382800 (2002-05-01), Sato
patent: 6764928 (2004-07-01), Ohtani
Kondow et al., “A 1.3um GaInNas Laser Diode with a Lifetime of over 1000 hours” Jpn. J. Appl. Phys., vol. 38(1999, pp. L1355-L1356.
Kitatano et al., “A 1.3um GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200K”, Jpn. J. Appl. Physl vol. 39 (2000), pp. L86-L87.
Sato, “Low Threshold and High Characteristic Temperature 1.3 um Range GaInNAs Lasers grown by Metalorganic Chemical Vapor Deposition”, Jpn. J. Appl. Phys, vol. 39 (2000) pp. 3403-3405.
Asai and Dandy, “Thermodynamic Analysis of III-V Semiconductor Alloys Grown y Metalorganic Vapor Phase Epitaxy”, Journal of Appliced Physics, vol. 88, No. 7, Oct. 1, 2000, pp. 4407-4416.
Piner et al, “Effect of Hydrogen on the Indium Incorporation in InGaN Epitaxial Films”, Appl. Phys Lett (70) Jan. 27, 1997, American Institute of Physics, pp. 461-463.
Kondow et al., “GaInNAs: A Novel Material for Long-Wavelength Semiconductor Lasers”, IEEE J. of Selected Topics in Quantum ELectronics, vol. 3, No. 3, Jun. 1997, pp. 719-730.
Nakahara et al., “1.3um Continuous-Wave Lasing Operating on GaInNAs Quantum-Well Lasers”, IEEE Photonics Technology Letters, Nol. 10 No. 4, Apr. 1998, pp. 487-488.
Kondow et al., “Gas-Source MBE of GaInNAs for Long Wavelength Laser diodes”, Journal of Crystal Growth 188 (1988) pp. 255-259.
Miyamoto et al., GaNAs/GaInAs Short-Period Superlattice Quantum Well Structures Grown by MOCVD Using TBAs and DMHy Journal of Crystal Growth 195, 1998, pp. 421-426.
Friedman et al., “Nonlinear Dependence of N Incorporation on In Content of GaInNAs” Journal of Crystal Growth 195 (1998) pp. 438-443.
Ougazzaden et al. “High-Quality InGaAsN Growth by Metalorganic Vapor-Phase Epitaxy using Nitrogen Carrier Gas and Dimethylhydrazine, Tertiarybutylarsine as Group V Precursors” Jpn. J. Appl. Phys. vol. 38(1999), pp. 1019-1021.
Sato and Satoh, “Room-Temperature Continuous-Wave Operations of 1.24um GaInNAs Lasers Grown by Metal Organic Chemical Vapor Deposition”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 5, No. 3, May/Jun. 1998.
Bour David P.
Chang Ying-Lan
Corzine Scott W.
Takeuchi Tetsuya
Tan Michael R. T.
Duong Khanh
Trinh Michael
LandOfFree
Method of making a long wavelength indium gallium arsenide... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of making a long wavelength indium gallium arsenide..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making a long wavelength indium gallium arsenide... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3587599