Self-aligned semiconductor contact structures and methods...

Details Self-aligned semiconductor contact structures and methods... Self-aligned semiconductor contact structures and methods...

2006-07-04

2006-07-04

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S774000

Reexamination Certificate

active

07071517

ABSTRACT:
A self-aligned contact structure and a method of forming the same include selected neighboring gate electrodes with adjacent sidewalls that are configured to angle toward each other. The angled surfaces of the gate electrodes can be protected using a liner layer that can extend the length of the contact window to define the sidewalls of the contact window.

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patent: 6294449 (2001-09-01), Wu et al.
patent: 6734564 (2004-05-01), Cronin et al.
patent: 2002/0079492 (2002-06-01), Koga
patent: 2002/0195672 (2002-12-01), Lee et al.
patent: 2001-230383 (2001-08-01), None
patent: 102002-0062796 (2002-07-01), None

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