Memory cell and method for forming the same

Details Memory cell and method for forming the same Memory cell and method for forming the same

2006-05-16

2006-05-16

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S407000, C257S412000

Reexamination Certificate

active

07045844

ABSTRACT:
A semiconductor memory cell structure having 4F2dimensions and method for forming the same. The memory cell is formed on a surface of a substrate and includes an active region formed in the substrate, a semiconductor post formed on the surface of the substrate over the active region and a capacitor is formed on the semiconductor post. A vertical access transistor having a gate structure formed on the semiconductor post is configured to electrically couple the respective memory cell capacitor to the active region when accessed.

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