Method of manufacturing a semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S618000, C430S022000, C430S030000, C430S311000, C355S026000, C355S053000

Reexamination Certificate

active

07052986

ABSTRACT:
A method for manufacturing a semiconductor apparatus device includes a plurality of layers on a semiconductor substrate. The method includes the steps of dividing a pattern of at least a layer into a plurality of sub-patterns, and joining the divided sub-patterns to perform patterning. The layer including wiring substantially affects operation of the semiconductor device depending on a positional relationship to any other wiring, the patterning is performed by one-shot exposure using a single mask, and only as to the layer including the wiring substantially affecting the operation of the semiconductor device depending on the positional relationship to any other wiring, the patterning is performed by one-shot exposure, and as to all of the other layers, the patterning is performed by division exposure.

REFERENCES:
patent: 5561317 (1996-10-01), Momma et al.
patent: 5731131 (1998-03-01), Momma et al.
patent: 6204912 (2001-03-01), Tsuchiya et al.
patent: 6238851 (2001-05-01), Nishi
patent: 6828085 (2004-12-01), Kochi et al.
patent: 0 557 079 (1993-08-01), None
patent: 0 959 501 (1999-11-01), None
patent: 4-326507 (1992-11-01), None
European Search Report dated May 10, 2005, issued in corresponding European patent application No. EP 03 02 1242, forwarded in a Communication dated May 19, 2005.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3584612

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.