Methods of forming ferroelectric capacitors using separate...

Details Methods of forming ferroelectric capacitors using separate... Methods of forming ferroelectric capacitors using separate...

2006-07-18

2006-07-18

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C257SE21208, C257SE21664

Reexamination Certificate

active

07078241

ABSTRACT:
Ferroelectric memory devices can be formed by polishing an insulating layer on a plurality of ferroelectric capacitors with a silica slurry to reduce a height of the insulating layer above a surface of the plurality of ferroelectric capacitors so that the surface remains covered by a portion of the insulating layer. The insulating layer can be further polished with a ceria slurry to further reduce the height of the insulating layer and to expose a polishing stop layer on the surface of the plurality of ferroelectric capacitors. Related devices are also disclosed.

REFERENCES:
patent: 5990507 (1999-11-01), Mochizuki et al.
patent: 6069081 (2000-05-01), Kelleher et al.
patent: 2002/0068452 (2002-06-01), Homma et al.
patent: 2003/0030084 (2003-02-01), Moise et al.
patent: 2002-0002570 (2002-01-01), None
patent: 2003-0001217 (2003-01-01), None
Notice to Submit a Response for Korean Patent Application No. 10-2003-0019255 dated Feb. 28, 2005.

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