Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-01-24
2006-01-24
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C438S487000, C117S044000
Reexamination Certificate
active
06989300
ABSTRACT:
A semiconductor film formation method allowing a single-crystal semiconductor film to be formed at a desired position on a substrate with reliability is disclosed. After preparing the substrate having a non-single-crystal semiconductor film formed thereon and an optical mask having a predetermined pattern, a projection area of the optical mask is relatively positioned at the desired position on the substrate. Thereafter, the desired position of the non-single-crystal semiconductor film is irradiated with laser light through the optical mask to change an irradiated portion of the non-single-crystal semiconductor film to the single-crystal semiconductor film. Then, an insulation film is formed on at least the single-crystal semiconductor film.
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Machine language translation of JP 05021343 A.
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Katten Muchin Zavis & Rosenman
Kielin Erik
NEC Corporation
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