Sensing scheme for programmable resistance memory using...

Details Sensing scheme for programmable resistance memory using... Sensing scheme for programmable resistance memory using...

2006-09-05

2006-09-05

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000, C365S205000

Reexamination Certificate

active

07102913

ABSTRACT:
A method and apparatus for sensing the resistance state of data in a resistance memory cell by using the voltage coefficient of the cell instead of only its resistance. A voltage potential is applied across the resistance memory cell allowing the voltage coefficient of the cell to be determined and subsequently used to determine the logic state of the cell.

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