Magnetoresistive effect element and magnetic memory device

Details Magnetoresistive effect element and magnetic memory device Magnetoresistive effect element and magnetic memory device

2006-04-25

2006-04-25

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000

Reexamination Certificate

active

07034348

ABSTRACT:
A magnetoresistive effect element may be given satisfactory magnetic characteristics because a deterioration of a magnetoresistive changing rate by annealing can be suppressed and a magnetic memory device includes this magnetoresistive effect element to provide excellent write characteristics. A magnetoresistive effect element has a pair of ferromagnetic layers (magnetization fixed layer5and magnetization free layer7) opposed to each other through an intermediate layer6to cause an electric current to flow in the direction perpendicular to the layer surface to obtain a magnetoresistive change. A magnetic memory device comprises the magnetoresistive effect element1in which at least one of the pair of ferromagnetic layers5, 7contains an amorphous ferromagnetic material whose crystallization temperature is higher than 623 K and bit lines and word lines sandwiching this magnetoresistive effect element and the magnetoresistive effect element in the thickness direction.

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