Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2006-05-30
2006-05-30
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S629000
Reexamination Certificate
active
07053405
ABSTRACT:
Disclosed is a phase-shifting mask having a pattern comprising a plurality of substantially transparent regions and a plurality of substantially opaque regions wherein the mask pattern phase-shifts at least a portion of incident radiation and wherein the phases are substantially equally spaced, thereby increasing resolution of a given lithographic system. Further disclosed is a semiconductor device fabricated utilizing the phase-shifting mask.
REFERENCES:
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Liebmann et al, “Alternating Phase Shifted Mask for Logic Gate Levels, Design and Mask Manufacturing”, SPIE, vol. 3679 p. 27 (1999).
Levenson et al, “Improving Resolution in Photolithography with a Phase-Shifting Mask”, IEEE Transactions on Electron Devices, ED-29, No. 12, p. 1828 (1982).
Agere Systems Inc.
Ngo Ngan V.
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