Semiconductor devices including a silicide layer

Details Semiconductor devices including a silicide layer Semiconductor devices including a silicide layer

2006-01-03

2006-01-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S303000, C257S304000, C257S305000, C257S306000, C365S149000, C365S154000

Reexamination Certificate

active

06982466

ABSTRACT:
Embodiments of the present invention include a method for manufacturing a semiconductor device and a semiconductor device, in which, when a DRAM and a MOS field effect transistor that becomes a component of a logic circuit are mix-mounted on the same chip, the DRAM and the MOS field effect transistor can be provided with designed performances. After a capacitor700of the DRAM is formed, silicide layers19aand19bare formed over N+type source/drain regions41cand41dof MOS field effect transistors200c,200dand200ethat are located in peripheral circuit region2000and logic circuit region3000.

REFERENCES:
patent: 6043537 (2000-03-01), Jun et al.
patent: 2001/0005610 (2001-06-01), Fukase et al.

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