Semiconductor device having wiring layer formed in wiring...

Details Semiconductor device having wiring layer formed in wiring... Semiconductor device having wiring layer formed in wiring...

2006-04-11

2006-04-11

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000

Reexamination Certificate

active

07026715

ABSTRACT:
A semiconductor device is disclosed, which comprises a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, the interlayer insulating film comprising a first insulating film and a second insulating film formed on the first insulating film, the first insulating film comprising a silicon oxide film containing carbon of a concentration, the second insulating film comprising a silicon oxide film containing carbon of a concentration lower than the concentration of the first insulating film or comprising a silicon oxide film containing substantially no carbon, a via contact made of a metal material embedded in a via hole formed in the interlayer insulating film, a diameter of the via hole in the first insulating film being smaller than that in the second insulating film at an interface between the first insulating film and the second insulating film.

REFERENCES:
patent: 6340435 (2002-01-01), Bjorkman et al.
patent: 6590290 (2003-07-01), Cronin et al.
patent: 6614096 (2003-09-01), Kojima et al.
patent: 6753608 (2004-06-01), Tomita
K. Higashi, et al., “A Manufacturable Copper/Low-k SiOC/SiCN Process Technology for 90nm-node High Performance eDRAM,” Proceedings of the IEEE 2002 International Interconnect Technology Conference, Jun. 2002, pp. 15-17.

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