Semiconductor device

Details Semiconductor device Semiconductor device

2006-09-12

2006-09-12

Andujah, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S310000

Reexamination Certificate

active

07105883

ABSTRACT:
A semiconductor device, including: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and nitrogen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.

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