Device for margin testing a semiconductor memory by applying...

Static information storage and retrieval – Read/write circuit – Testing

Reexamination Certificate

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C365S202000, C365S203000

Reexamination Certificate

active

06985393

ABSTRACT:
A margin test on a Dynamic Random Access Memory (DRAM) in accordance with the invention begins with a supply voltage level being stored in all memory cells of the DRAM. Circuitry incorporated into each sense amplifier of the DRAM then isolates the digit line equilibrating circuitry in each sense amplifier from the cell plate voltage DVC2or supply voltage VCCto which the equilibrating circuitry is normally connected and connects the equilibrating circuitry to ground instead.

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