Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-03
2006-01-03
Chaudhari, Chandra (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S639000
Reexamination Certificate
active
06982468
ABSTRACT:
A semiconductor device and a method for manufacturing the same of forming a silicon nitride film selectively without giving damages or contaminations to a surface of the silicon substrate thereby forming different types of gate dielectrics in one identical silicon substrate, are obtained by forming a silicon dioxide on the surface of a silicon substrate, then removing a portion thereof, forming a silicon nitride film to the surface of the substrate from which the silicon dioxide has been removed and, simultaneously, introducing nitrogen to the surface of the silicon dioxide which is left not being removed or, alternatively, depositing a silicon dioxide on the surface of the silicon substrate by chemical vapor deposition, then removing a portion thereof, forming a silicon nitride film on the surface of a substrate from which the silicon dioxide has been removed, and, simultaneously, introducing nitrogen to the surface of the silicon dioxide left not being removed, successively, dissolving and removing nitrogen-introduced silicon oxide film to expose the surface of the substrate and oxidizing the exposed surface of the silicon substrate and the silicon nitride film
REFERENCES:
patent: 4621277 (1986-11-01), Ito et al.
patent: 5254489 (1993-10-01), Nakata
patent: 6255702 (2001-07-01), Iwata et al.
patent: 6417037 (2002-07-01), Feng
patent: 6436845 (2002-08-01), Kamath et al.
patent: 6461919 (2002-10-01), Shibata
patent: 2001-7217 (2001-01-01), None
Marie S.C. Luo et al., “A 0.25 μm CMOS Technology with 45å NO-nitrided Oxide,”IEDM Technical Digest, 1995, pp. 691-694.
M. Togo et al. “Low-Leakage and Highly-Reliable 1.5nm SiON Gate-Dielectric Using Radical Oxynitridation for Sub-0.1 μm CMOS,”2000 Symposiumon VLSI Technology Digest of Technical Papers, 2000, pp. 116-117.
Mine Toshiyuki
Tsujikawa Shimpei
Yamauchi Tsuyoshi
Yokoyama Natsuki
Yugami Jiro
Chaudhari Chandra
Hitachi ULSI Systems Co. Ltd.
Miles & Stockbridge P.C.
Renesas Technology Corp.
LandOfFree
Semiconductor device and method for manufacturing thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and method for manufacturing thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3580098