Wafer bonding method of forming silicon-on-insulator...

Details Wafer bonding method of forming silicon-on-insulator... Wafer bonding method of forming silicon-on-insulator...

2006-01-10

2006-01-10

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S459000, C438S404000

Reexamination Certificate

active

06984570

ABSTRACT:
A wafer bonding method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing at least a portion of an outer surface of silicon of a device wafer. After the nitridizing, the device wafer is joined with a handle wafer. A method of forming silicon-on-insulator comprising integrated circuitry includes nitridizing an interface of the silicon comprising layer of silicon-on-insulator circuitry with the insulator layer of the silicon-on-insulator circuitry. After the nitridizing, a field effect transistor gate is formed operably proximate the silicon comprising layer. Other methods are disclosed. Integrated circuitry is contemplated regardless of the method of fabrication.

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