Method of producing organic semiconductor device including...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation

Reexamination Certificate

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C438S099000, C438S590000, C438S592000, C438S593000, C438S610000, C438S660000, C438S674000, C252S500000, C525S09200D

Reexamination Certificate

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07026231

ABSTRACT:
There is provided a method of producing an organic semiconductor device by which an organic semiconductor device having an optional configuration can easily be produced.A method of producing an organic semiconductor device comprising a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and an organic semiconductor layer is provided which comprises the steps of:1) forming a monomer layer of a conductive polymer precursor;2) maintaining the monomer layer at a given temperature; and3) applying an oxidizing agent solution to a desired location of the monomer layer to obtain a polymer layer of a desired conductivity.

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