Method of polishing a silicon-containing dielectric

Details Method of polishing a silicon-containing dielectric Method of polishing a silicon-containing dielectric

2006-07-04

2006-07-04

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S692000, C438S693000

Reexamination Certificate

active

07071105

ABSTRACT:
The invention is directed to a method of polishing a silicon-containing dielectric layer involving the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of about 4 to about 6. The polishing additive comprises a functional group having a pKaof about 4 to about 9 and is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof. The invention is further directed to the chemical-mechanical polishing system, wherein the inorganic abrasive is ceria.

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