Semiconductor memory with embedded DRAM

Details Semiconductor memory with embedded DRAM Semiconductor memory with embedded DRAM

2006-04-11

2006-04-11

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Capacitors

C365S149000, C365S185080

Reexamination Certificate

active

07027317

ABSTRACT:
A semiconductor memory comprises a plurality of memory cells, for example Flash memory cells, arranged in a plurality of lines, and a plurality of memory cell access signal lines, each one associated with at least one respective line of memory cells, for accessing the memory cells of the at least one respective line of memory cells; each signal line has a capacitance intrinsically associated therewith. A plurality of volatile memory cells is provided, each having a capacitive storage element. Each volatile memory cell is associated with a respective signal line, and the respective capacitive storage element formed by the capacitance intrinsically associated with the respective signal lines. In particular, the parasitic capacitances associated with bit lines of a matrix of memory cells can be exploited as capacitive storage elements.

REFERENCES:
patent: 4760556 (1988-07-01), Deguchi et al.
patent: 5025421 (1991-06-01), Cho
patent: 6141248 (2000-10-01), Forbes et al.
patent: 2002/0085423 (2002-07-01), Tedrow et al.

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