Photolithographic mask

Details Photolithographic mask Photolithographic mask

2006-07-04

2006-07-04

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C378S034000, C378S035000

Reexamination Certificate

active

07070887

ABSTRACT:
A photolithographic mask is based on a combination of a half-tone phase mask and an alternating phase mask such that when radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partly transmissive and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithographic mask. In particular, the advantages can be obtained with only one absorber material and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure.

REFERENCES:
patent: 5376483 (1994-12-01), Rolfson
patent: 5409789 (1995-04-01), Ito
patent: 5591550 (1997-01-01), Choi et al.
patent: 5718829 (1998-02-01), Pierrat
patent: 2000 305 245 (2000-11-01), None
patent: 02/41076 (2002-05-01), None

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