Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-24
2006-01-24
Munson, Gene M. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S327000, C257S616000
Reexamination Certificate
active
06989570
ABSTRACT:
A transistor is located on a base layer1resting on a semiconductor substrate SB and formed from a relaxed silicon-germanium layer, and includes, under the isolated gate7, a first strained silicon layer2resting on the base layer1, surmounted by a buried insulating layer10, surmounted by a second strained silicon layer4extending between the source S and drain D regions.
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Bensahel Daniel
Skotnicki Thomas
Jenkens & Gilchrist PC
Munson Gene M.
STMicroelectronics S.A.
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