Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-04
2006-07-04
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S370000, C257S526000, C257S539000, C257S552000, C257S566000, C257S565000, C257S572000
Reexamination Certificate
active
07071516
ABSTRACT:
A PMOS transistor (Q2) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region (5), a P diffusion region (6), and a conductive film (10) and a second gate electrode (15) provided via a gate oxide film (21) on a surface of an N−epitaxial layer (2) between the P diffusion regions (5and6). The gate oxide film (21) is formed in a thickness having a gate breakdown voltage higher than the element breakdown voltage of a typical field oxide film and the like.
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Mitsubishi Denki & Kabushiki Kaisha
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Soward Ida M.
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