Method of fabricating oxides with low defect densities

Details Method of fabricating oxides with low defect densities Method of fabricating oxides with low defect densities

2006-04-18

2006-04-18

Thai, Luan (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S743000, C438S694000, C438S784000, C438S787000

Reexamination Certificate

active

07030045

ABSTRACT:
A method and system for forming a low defect oxide in a plasma processing chamber. By pulsing at least one of an RF power source and a processing gas, the growth of the oxide can be regulated. During periods in which the processing gas is not injected, an inert gas is injected to keep a substantially constant flow rate.

REFERENCES:
patent: 4232057 (1980-11-01), Ray et al.
patent: 4409260 (1983-10-01), Pastor et al.
patent: 4474829 (1984-10-01), Peters
patent: 4776925 (1988-10-01), Fossum et al.
patent: 4918031 (1990-04-01), Flamm et al.
patent: 5122483 (1992-06-01), Sakai et al.
patent: 5234529 (1993-08-01), Johnson
patent: 5405492 (1995-04-01), Moslehi
patent: 5412246 (1995-05-01), Dobuzinsky et al.
patent: 5738909 (1998-04-01), Thakur et al.
patent: 5935373 (1999-08-01), Koshimizu
patent: 6043608 (2000-03-01), Samukawa et al.
patent: 6051113 (2000-04-01), Moslehi
patent: 6051503 (2000-04-01), Bhardwaj et al.
patent: 6101972 (2000-08-01), Bluck et al.
patent: 6155198 (2000-12-01), Danek et al.
patent: 6167834 (2001-01-01), Wang et al.
patent: 6174450 (2001-01-01), Patrick et al.
patent: 6187682 (2001-02-01), Denning et al.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6200651 (2001-03-01), Roche et al.
patent: 6256434 (2001-07-01), Matuschek et al.
patent: 6258735 (2001-07-01), Xia et al.
patent: 6331494 (2001-12-01), Olson et al.
patent: 6410462 (2002-06-01), Yang et al.
patent: 6413583 (2002-07-01), Moghadam et al.
patent: 6461483 (2002-10-01), Gopalraja et al.
patent: 6475353 (2002-11-01), Lantsman
patent: 6482476 (2002-11-01), Liu
patent: 6541367 (2003-04-01), Mandal
patent: 6562715 (2003-05-01), Chen et al.
patent: 6709715 (2004-03-01), Lang et al.
patent: 2002/0132473 (2002-09-01), Chiang et al.
patent: 2002/0171994 (2002-11-01), Grimard et al.
patent: 2003/0049931 (2003-03-01), Byun et al.

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