Silicon on insulator substrate having improved thermal...

Details Silicon on insulator substrate having improved thermal... Silicon on insulator substrate having improved thermal...

2006-03-21

2006-03-21

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S479000, C438S155000

Reexamination Certificate

active

07015078

ABSTRACT:
A silicon on insulator (SOI) substrate includes a layer of silicon carbide beneath an insulating layer on which semiconductor devices are formed. The silicon carbide layer has a high thermal conductivity and provides beneficial dissipation of thermal energy generated by the devices. The SOI substrate may be formed by a bonding method. SOI MOSFET devices using the SOI substrate are also disclosed.

REFERENCES:
patent: 4882252 (1989-11-01), Kawamura et al.
patent: 5637353 (1997-06-01), Kimock et al.
patent: 6130102 (2000-10-01), White et al.
patent: 6274424 (2001-08-01), White et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 6508948 (2003-01-01), Felker et al.
patent: 6562703 (2003-05-01), Maa et al.
patent: 6613643 (2003-09-01), Krishnan et al.
patent: 6635909 (2003-10-01), Clark et al.
patent: 6806532 (2004-10-01), Kobayashi

Affiliated with

Also associated with

Rating

Silicon on insulator substrate having improved thermal... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon on insulator substrate having improved thermal..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon on insulator substrate having improved thermal... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3575851