Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reissue Patent
2006-01-31
2006-01-31
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S331000, C257S146000, C257S147000, C257S139000
Reissue Patent
active
RE038953
ABSTRACT:
The RBSOA of a device is improved. A gate electrode (10) is linked to a p base layer (4) which is formed in a cell region (CR), and a p semiconductor layer (13) is formed to surround the cell region (CR). An emitter electrode (11) is connected to a top surface of a side diffusion region (SD) of the p semiconductor layer (13) and to a top surface of a margin region (MR) which is adjacent to the side diffusion region (SD), through a contact hole (CH). Further, in these regions, an n+emitter layer (5) is not formed. Most of avalanche holes (H) which are created in the vicinity of the side diffusion region (SD) when a high voltage is applied pass through the side diffusion region (SD), while some of the avalanche holes (H) pass through the margin region (MR) and are then ejected to the emitter electrode (11). Since there is no n+emitter layer (5) in these paths, a flow of the holes (H) does not conduct a parasitic bipolar transistor. As a result of this, the RBSOA is improved.
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Jackson Jerome
Mitsubishi Denki & Kabushiki Kaisha
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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