Composition for stripping photoresist and method of...

Details Composition for stripping photoresist and method of... Composition for stripping photoresist and method of...

2006-05-02

2006-05-02

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S749000, C134S001200, C134S001300, C252S079100, C252S079400

Reexamination Certificate

active

07037852

ABSTRACT:
A composition for stripping photoresist, methods of preparing and forming the same, a method of manufacturing a semiconductor device using the composition, and a method of removing a photoresist pattern from an underlying layer using the composition, where the composition may include an ethoxy N-hydroxyalkyl alkanamide represented by the formula, CH3CH2—O—R3—CO—N—R1R2OH, an alkanolamine and a polar material. Raw materials of alkyl alkoxy alkanoate, represented by a chemical formula of R4—O—R3—COOR5, and alkanolamine, represented by a chemical formula of NHR1R2OH, may be mixed to form a mixture, which is stirred and cooled to obtain the composition. The composition may balance exfoliation and dissolution of photoresist patterns, and may potentially eliminate thread-type residues from remaining on a surface of an underlying layer after removing the photoresist patterns.

REFERENCES:
patent: 5334332 (1994-08-01), Lee
patent: 6508887 (2003-01-01), Park et al.
patent: 2782079 (2000-11-01), None
patent: 100335484 (2000-03-01), None

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