Method for improving thickness uniformity of deposited...

Details Method for improving thickness uniformity of deposited... Method for improving thickness uniformity of deposited...

2006-09-05

2006-09-05

Meeks, Timothy (Department: 1762)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S788000, C438S789000, C438S790000, C427S535000, C427S579000, C427S255370

Reexamination Certificate

active

07101815

ABSTRACT:
A method for depositing highly conformal silicate glass layers via chemical vapor deposition through the reaction of TEOS and O3is provided, comprising placing an in-process semiconductor wafer having multiple surface constituents in a plasma-enhanced chemical vapor deposition chamber.

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