Methods of forming a transistor with an integrated metal...

Details Methods of forming a transistor with an integrated metal... Methods of forming a transistor with an integrated metal...

2006-03-14

2006-03-14

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S299000, C438S301000, C438S305000

Reexamination Certificate

active

07012024

ABSTRACT:
Methods of forming a transistor having integrated metal silicide transistor gate electrode on a semiconductor assembly are described. The transistor gate is partially fabricated by reacting the metal with epitaxial silicon while residing in a trench to form metal silicide. A transistor gate isolation capping layer is formed in the trench and on the metal silicide. Optional trench spacers can be added to reduce the critical dimension restraints of a given fabrication process and thus form a transistor having smaller feature sizes than the critical dimension.

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