Ferroelectric memory with improved life span

Details Ferroelectric memory with improved life span Ferroelectric memory with improved life span

2006-09-12

2006-09-12

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S230030, C365S230060

Reexamination Certificate

active

07106616

ABSTRACT:
Memory cell units111, each having ferroelectric memory cells in one row by a plurality of columns, are arrayed in a matrix. Plate lines are provided for each of the units111. PLE control circuits output plate enable signals PLE. When one of the units111is selected, the signal PLE is supplied to all the plate lines in the corresponding row and all the plate lines in the other rows are grounded. The plate enable signal in the column including the selected unit111is at high level and the plate enable signals in the other columns are at low level. Thus, only the plate line of the selected unit111is at high level and all the other plate lines are at low level.

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