Semiconductor device and method of fabricating same

Details Semiconductor device and method of fabricating same Semiconductor device and method of fabricating same

2006-03-07

2006-03-07

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S202000, C438S203000

Reexamination Certificate

active

07009259

ABSTRACT:
A semiconductor device (100) according to the present invention comprises a vertical PNP bipolar transistor (20), an NMOS transistor (50) and a PMOS transistor (60) that are of high dielectric strength, and a P-type semiconductor substrate1, as shown inFIG. 2. A substrate isolation layer (21) of the PNP bipolar transistor (20), a drain buried layer (51) of the NMOS transistor (50), and a back gate buried layer (61) of the PMOS transistor (60) are formed simultaneously by selectively implanting N-type impurities, such as phosphorous, in the semiconductor substrate (1). This invention greatly contributes to curtailing the processes of fabricating BiCMOS ICs and the like including vertical bipolar transistors with easily controllable performance characteristics, such as a current amplification factor, and MOS transistors with high dielectric strength and makes even more miniaturization of such ICs achievable.

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International Search Report dated May 13, 2003.

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