Ferroelectric memory cell array and device for operating the...

Details Ferroelectric memory cell array and device for operating the... Ferroelectric memory cell array and device for operating the...

2006-07-18

2006-07-18

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S063000, C365S069000

Reexamination Certificate

active

07079410

ABSTRACT:
A ferroelectric memory cell array and a device for driving the same are disclosed, in which the ferroelectric memory cell array is defined as first and second cell regions each using at least one group of four split wordlines to reduce a layout area of the memory cell array and/or a RC load when a split wordline is used as a plate line. In the first cell region, the first and third split wordlines are used as wordlines, and the second and fourth split wordlines are used as plate lines. In the second cell region, the second and fourth split wordlines are used as wordlines and the first and third split wordlines are used as plate lines.

REFERENCES:
patent: 6072711 (2000-06-01), Kang
patent: 6118687 (2000-09-01), Kang

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