Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-09-12
2006-09-12
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S154000, C438S155000, C438S233000, C438S296000, C438S298000, C438S405000, C438S433000, C438S453000
Reexamination Certificate
active
07105389
ABSTRACT:
In formation of a source/drain region of an NMOS transistor, a gate-directional extension region <41a> of an N+block region <41>in an N+block resist film <51< prevents a well region <11>located under the gate-directional extension region <41a> from implantation of an N-type impurity. A high resistance forming region, which is the well region <11>having a possibility for implantation of an N-type impurity on a longitudinal extension of a gate electrode <9>, can be formed as a high resistance forming region <A2>narrower than a conventional high resistance forming region <A1>. Thus, a semiconductor device having a partially isolated body fixed SOI structure capable of reducing body resistance and a method of manufacturing the same are obtained.
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Ipposhi Takashi
Iwamatsu Toshiaki
Maeda Shigenobu
Fourson George
Pham Thanh V.
Renesas Technology Corp.
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