Semiconductor device having crystalline semiconductor layer

Details Semiconductor device having crystalline semiconductor layer Semiconductor device having crystalline semiconductor layer

2006-04-04

2006-04-04

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07023052

ABSTRACT:
A semiconductor device having performance comparable with a MOSFET is provided. An active layer of the semiconductor device is formed by a crystalline silicon film crystallized by using a metal element for promoting crystallization, and further by carrying out a heat treatment in an atmosphere containing a halogen element to carry out gettering of the metal element. The active layer after this process is constituted by an aggregation of a plurality of needle-shaped or column-shaped crystals. A semiconductor device manufactured by using this crystalline structure has extremely high performance.

REFERENCES:
patent: 5527384 (1996-06-01), Williams et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5591967 (1997-01-01), Moake
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5614732 (1997-03-01), Yamazaki
patent: 5616506 (1997-04-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5717224 (1998-02-01), Zhang
patent: 5763899 (1998-06-01), Yamazaki et al.
patent: 5814540 (1998-09-01), Takemura et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5821563 (1998-10-01), Yamazaki et al.
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5882960 (1999-03-01), Zhang et al.
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 5897374 (1999-04-01), Lin
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5966594 (1999-10-01), Adachi et al.
patent: 6071764 (2000-06-01), Zhang et al.
patent: 6077758 (2000-06-01), Zhang et al.
patent: 6194254 (2001-02-01), Takemura
patent: 6207969 (2001-03-01), Yamazaki
patent: 6210997 (2001-04-01), Adachi et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 6455401 (2002-09-01), Zhang et al.
patent: 6465284 (2002-10-01), Adachi et al.
patent: 6475840 (2002-11-01), Miyanaga et al.
patent: 6482686 (2002-11-01), Takemura
patent: 2001/0019860 (2001-09-01), Adachi et al.
patent: 2003/0022467 (2003-01-01), Zang et al.
patent: 2003/0054595 (2003-03-01), Takemura
patent: 1094851 (1994-11-01), None
patent: 0 631 325 (1994-12-01), None
patent: 03-203322 (1991-09-01), None
patent: 06-349735 (1994-12-01), None
patent: 07-066425 (1995-03-01), None
patent: 07-066426 (1995-03-01), None
patent: 07-094757 (1995-04-01), None
patent: 07-321339 (1995-12-01), None
Decision of Rejection (Application No. Heisei 8 Patent Application No. 294419) Issued by Japan Patent Office dated Jan. 25, 2005 w/English translation.
Schoenfeld et al., “Crystallization of amorphous silicon by NiSi sub 2 precipitates”, Thin Solid Films, pp. 236-240, No. 281.

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