Method of forming silicon-based thin film, silicon-based...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S482000, C427S574000

Reexamination Certificate

active

07074641

ABSTRACT:
A method of forming a silicon-based thin film according to the present invention comprises introducing a source gas containing silicon fluoride and hydrogen into a vacuum vessel, and using a high frequency plasma CVD method to form a silicon-based thin film on a substrate introduced into the vacuum vessel, wherein a luminous intensity attributed to SiFα (440 nm) is not smaller than a luminous intensity attributed to Hα (656 nm), thereby providing a photovoltaic element with excellent performance at a low cost as compared with a conventional one, a method of forming a silicon-based thin film with excellent characteristics in a short process cycle time at a further increased film-forming rate, a silicon-based thin film formed by the method, and a photovoltaic element comprising the silicon-based thin film with excellent characteristics, adhesion, and resistance to the environments.

REFERENCES:
patent: 6103138 (2000-08-01), Kondo
patent: 6337224 (2002-01-01), Okamoto et al.
patent: 6488995 (2002-12-01), Nishimoto et al.
patent: 6620247 (2003-09-01), Ebe et al.
patent: 6653165 (2003-11-01), Kondo et al.
patent: 6737123 (2004-05-01), Kondo et al.
patent: 6794275 (2004-09-01), Kondo et al.
patent: 6855621 (2005-02-01), Kondo et al.
patent: 6858308 (2005-02-01), Kondo et al.
patent: 7-105354 (1995-04-01), None
patent: 11-330520 (1999-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of forming silicon-based thin film, silicon-based... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming silicon-based thin film, silicon-based..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming silicon-based thin film, silicon-based... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3570498

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.