Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-09
2006-05-09
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S411000
Reexamination Certificate
active
07042054
ABSTRACT:
A method for processing a semiconductor topography is provided, which includes diffusing deuterium across one or more interfaces of a silicon-oxide-nitride-oxide-silicon (SONOS) structure. In particular, the method may include diffusing deuterium across one or more interfaces of a SONOS structure during a reflow of a dielectric layer spaced above the SONOS structure. In some embodiments, the method may include forming a deutereated nitride layer above the SONOS structure prior to the reflow process. In addition or alternatively, the method may include forming a deutereated nitride layer within the SONOS structure prior to the reflow process. In some cases, the method may further include annealing the SONOS structure with a deutereated substance prior to forming the deutereated nitride layer. In either embodiment, a SONOS structure may be formed which includes deuterium arranged within an interface of a silicon layer and an oxide layer of the structure.
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Jenne Frederick B.
Ramkumar Krishnaswamy
Cypress Semiconductor Corp.
Daffer Kevin L.
Daffer McDaniel LLP
Lettang Mollie E.
Pham Hoai
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