Semiconductor device with MISFET having low leakage current

Details Semiconductor device with MISFET having low leakage current Semiconductor device with MISFET having low leakage current

2006-01-10

2006-01-10

Munson, Gene M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S330000, C257S334000, C257S341000, C257S369000, C257S383000, C257S384000, C257S412000, C257S413000, C257S757000

Reexamination Certificate

active

06984864

ABSTRACT:
In an n-channel type power MISFET, a source electrode in contact with an n+-semiconductor region (source region) and a p+-semiconductor region (back gate contact region) is constituted with an Al film and an underlying barrier film comprised of MoSi2, use of the material having higher barrier height relation to n-Si for the barrier film increasing the contact resistance to n-Si and backwardly biasing the emitter and base of a parasitic bipolar transistor making it less tending to turn-on, thereby decreasing the leak current of power MISFET.

REFERENCES:
patent: 4914500 (1990-04-01), Liu et al.
patent: 5907789 (1999-05-01), Komatsu
patent: 6255692 (2001-07-01), Huang
patent: 6307231 (2001-10-01), Numazawa et al.
patent: 2001-127072 (2001-05-01), None

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