Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-28
2006-03-28
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S212000, C257S341000
Reexamination Certificate
active
07019360
ABSTRACT:
A method is provided for forming a power semiconductor device. The method begins by providing a substrate of a first conductivity type and then forming a voltage sustaining region on the substrate. The voltage sustaining region is formed by depositing an epitaxial layer of a first conductivity type on the substrate and forming at least one trench in the epitaxial layer. At least one doped column having a dopant of a second conductivity type is located in the epitaxial layer, adjacent a sidewall of the trench. The trench is etched using an etchant gas that also serves as a dopant source for the formation of the doped column. For example, if a p-type dopant such as boron is desired, BCl3 may be used as the etchant gas. Alternatively, if an n-type dopant such as phosphorus is required, PH3 may be used as the etchant gas. The dopant present in the gas is incorporated into the silicon defining the surfaces of the trench. This dopant is subsequently diffused to form the doped column surrounding the trench. The trench is filled with an insulating material such as silicon dioxide, silicon nitride, polysilicon, or a combination of such materials. The step of filling the trench may be performed before or after the dopant is diffused to form the doped column. Finally, at least one region of the second conductivity type is formed over the voltage sustaining region to define a junction therebetween.
REFERENCES:
patent: 4140558 (1979-02-01), Murphy et al.
patent: 4419150 (1983-12-01), Soclof
patent: 4569701 (1986-02-01), Oh
patent: 4711017 (1987-12-01), Lammert
patent: 4735633 (1988-04-01), Chiu
patent: 4893160 (1990-01-01), Blanchard
patent: 5108783 (1992-04-01), Tanigawa et al.
patent: 5216275 (1993-06-01), Chen
patent: 5759921 (1998-06-01), Rostoker
patent: 5912497 (1999-06-01), Baliga
patent: 6465304 (2002-10-01), Blanchard et al.
patent: 6479352 (2002-11-01), Blanchard
patent: 6534836 (2003-03-01), Osanai
patent: 6566201 (2003-05-01), Blanchard
patent: 6576516 (2003-06-01), Blanchard
patent: 6608350 (2003-08-01), Kinzer et al.
patent: 6624494 (2003-09-01), Blanchard et al.
patent: 6656797 (2003-12-01), Blanchard
patent: 6710400 (2004-03-01), Blanchard
patent: 6750104 (2004-06-01), Blanchard et al.
patent: 6794251 (2004-09-01), Blanchard
patent: 2001/0026977 (2001-10-01), Hattori et al.
patent: 2001/0036704 (2001-11-01), Hueting et al.
patent: 2001/0053568 (2001-12-01), Deboy et al.
patent: 2003/0122189 (2003-07-01), Blanchard et al.
patent: 2004/0110333 (2004-06-01), Blanchard
patent: 2004/0164348 (2004-08-01), Blanchard et al.
patent: 2005/0042830 (2005-02-01), Blanchard
Deboy, G. et al., “A new generation of high voltage MOSFET's breaks the limit line of silicon,” Int'l Electron Devices Meeting, Dec. 1998, 26.2.1,pp. 683-685.
Chen, Xing Bi et al., “A Novel High-Voltage Sustaining Structure With Buried Oppositely Doped Regions,”IEEE Transactions on Electron Devices, vol. 47, No. 6, Jun. 2000, pp. 1280-1285.
Cezac, N. et al., “A New Generation of Power Unipolar Devices: the Concept of the Floating Islands MOS Transistor (FLIMOST),” Proceedings of the 12thInt'l Symposium on Power Semiconductor Devices & ICs, Toulouse, France, May 22-25, 2000, pp. 69-72.
Lee, Ming-Kwang et al., “On the Semi-insulating Polycrystaline Silicone Resistor,”Solid State Electronics, vol. 27, No. 11, 1984, pp. 995-1001.
Blanchard Richard A.
Hshieh Fwu-Iuan
General Semiconductor Inc.
Mayer & Williams PC
Mayer, Esq. Stuart H.
Williams Esq. Karin L.
LandOfFree
High voltage power mosfet having a voltage sustaining region... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High voltage power mosfet having a voltage sustaining region..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High voltage power mosfet having a voltage sustaining region... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3568002