Semiconductor device with low resistance region

Details Semiconductor device with low resistance region Semiconductor device with low resistance region

2006-09-26

2006-09-26

Sarkar, Asok Kumar (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29201, C438S270000

Reexamination Certificate

active

07112843

ABSTRACT:
A method for manufacturing a semiconductor device including the steps of: forming a hole having a predetermined depth in a semiconductor layer of a first conductivity type in correspondence with a drain region, the semiconductor layer being formed on a semiconductor substrate; forming a diffusion source layer containing impurities of a second conductivity type different from the first conductivity type in the hole; forming a source region of the first conductivity type in a region shallower than the depth of the hole in the semiconductor layer; forming a channel region of the second conductivity type to be disposed between the drain region and the source region in a region deeper than the depth of the source region in the semiconductor layer; and heating the semiconductor substrate to a first temperature after completing the diffusion source layer forming step to diffuse the impurities of the second conductivity type from the diffusion source layer into the channel region, thereby forming a low resistance region having a conductivity higher than that of the channel region.

REFERENCES:
patent: 4767722 (1988-08-01), Blanchard
patent: 5034785 (1991-07-01), Blanchard
patent: 6008520 (1999-12-01), Darwish et al.
patent: 6144067 (2000-11-01), Kinzer

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