Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-19
2006-09-19
Fourson, George (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S330000, C257S316000, C257SE29129, C257SE29135, C438S257000, C438S182000, C438S183000
Reexamination Certificate
active
07109549
ABSTRACT:
Disclosed is a semiconductor device having a plurality of memory cells arranged in a first direction and a second direction perpendicular to the first direction, each memory cell comprising a first insulating film formed on a semiconductor substrate, a floating gate formed on the first insulating film, a second insulating film which includes a first portion formed on a top surface of the floating gate and a second portion formed on that side surface of the floating gate which is parallel to the first direction, and a control gate which covers the first and second portions of the second insulating film, a width in the second direction of the floating gate increasing with increasing distance from its bottom, and a width in the second direction of the second portion of the second insulating film decreasing with increasing distance from its bottom.
REFERENCES:
patent: 6060740 (2000-05-01), Shimizu et al.
patent: 8-316348 (1996-11-01), None
patent: 2000-22008 (2000-01-01), None
patent: 2002-190538 (2002-07-01), None
patent: 2003-163290 (2003-06-01), None
Y.Ozawa, “Nonvolatile Semiconductor Memory Cell and Method of Manufacturing the Same,” U.S. Appl. No. 10/791,870, filed Mar. 4, 2004.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Fourson George
Kabushiki Kaisha Toshiba
Maldonado Julio J.
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